Determination of Energy Band Gap In Semiconductor
| Product code | EEN0023 |
| Categories | Electronic Trainer Equipment Breadboard |
| Standards | Manufactured to IS / BS / EN / ASTM / AASHTO as applicable |
| Supply | India and export — 90+ countries |
- Description
Determination of Energy Band Gap In Semiconductor
01. 2V D.C. at 10mA, regulated power supply.
02. Digital microammeter, 3½ digits having range 200mA D.C.
03. Semiconductor diode.
04. Thermometer 0-110 °C.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains ON/OFF switch and fuse
Specification
Determination of Energy Band Gap In Semiconductor- To draw the characteristics of a P-N junction diode for reverse saturation current and temperature.
- To determine the energy band gap in a P-N junction diode.
Features:
The board consists of the following built-in parts :01. 2V D.C. at 10mA, regulated power supply.
02. Digital microammeter, 3½ digits having range 200mA D.C.
03. Semiconductor diode.
04. Thermometer 0-110 °C.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains ON/OFF switch and fuse
Determination of Energy Band Gap In Semiconductor suppliers in India
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